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STT130
Thyristor-Thyristor Modules
Dimensions in mm (1mm=0.0394") Type VRSM VDSM V 900 1300 1500 1700 1900 VRRM VDRM V 800 1200 1400 1600 1800
STT130GK08 STT130GK12 STT130GK14 STT130GK16 STT130GK18
Symbol ITRMS, IFRMS TVJ=TVJM ITAVM, IFAVM TC=85oC; 180o sine TVJ=45oC VR=0 ITSM, IFSM TVJ=TVJM VR=0
2
Test Conditions
Maximum Ratings 300 130
Unit A
t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine repetitive, IT=500A
5500 5850 4800 5100 151000 142000 115000 108000 150
A
i dt
TVJ=45oC VR=0 TVJ=TVJM VR=0
A2s
TVJ=TVJM f=50Hz, tp=200us (di/dt)cr VD=2/3VDRM IG=0.5A diG/dt=0.5A/us (dv/dt)cr PGM PGAV VRGM TVJ TVJM Tstg VISOL Md Weight 50/60Hz, RMS _ IISOL<1mA
A/us non repetitive, IT=500A 500 1000 120 60 8 10 -40...+125 125 -40...+125 t=1min t=1s 3000 3600 2.25-2.75/20-25 4.5-5.5/40-48 125 V/us W W V
o
TVJ=TVJM; VDR=2/3VDRM RGK= ; method 1 (linear voltage rise) TVJ=TVJM IT=ITAVM tp=30us tp=500us
C
V~ Nm/lb.in. g
Mounting torque (M6) Terminal connection torque (M6) Typical including screws
STT130
Thyristor-Thyristor Modules
Symbol Test Conditions Characteristic Values 10 1.36 0.8 1.5 VD=6V; VD=6V; TVJ=TVJM;
o
Unit mA V V m V mA V mA mA mA us us uC A K/W K/W mm mm m/s2
IRRM, IDRM TVJ=TVJM; VR=VRRM; VD=VDRM VT, VF VTO rT VGT IGT VGD IGD IL IH tgd tq QS IRM RthJC RthJK dS dA a per thyristor/diode; DC current per module per thyristor/diode; DC current per module Creeping distance on surface Strike distance through air Maximum allowable acceleration TVJ=25 C; tp=30us; VD=6V IG=0.5A; diG/dt=0.5A/us TVJ=25oC; VD=6V; RGK= TVJ=25 C; VD=1/2VDRM IG=0.5A; diG/dt=0.5A/us TVJ=TVJM; IT=160A; tp=200us; -di/dt=10A/us VR=100V; dv/dt=20V/us; VD=2/3VDRM TVJ=TVJM; IT, IF=300A; -di/dt=50A/us typ.
o
IT, IF=300A; TVJ=25 C For power-loss calculations only (TVJ=125oC)
o
o
TVJ=25 C TVJ=-40oC TVJ=25oC TVJ=-40oC VD=2/3VDRM
2.5 2.6 150 200 0.2 10 300 200 2 150 550 235 0.23 0.115 0.33 0.165 12.7 9.6 50
FEATURES
* International standard package * Copper base plate * Planar passivated chips * Isolation voltage 3600 V~
APPLICATIONS
* Motor control * Power converter * Heat and temperature control for industrial furnaces and chemical processes * Lighting control * Contactless switches
ADVANTAGES
* Space and weight savings * Simple mounting * Improved temperature and power cycling * Reduced protection circuits
STT130
Thyristor-Thyristor Modules
4000 ITSM A 3000 50 Hz 80 % VRRM TVJ = 45C TVJ = 125C 2000 105 TVJ = 45C TVJ = 125C 1000 i2 t A 2s 106
0 0.001
104 0.01 0.1 s t 1 1 1 t ms 0
Fig. 1 Surge overload current ITSM, IFSM: Crest value, t: duration
Fig. 2 i2t versus time (1-10 ms)
Fig. 2a Maximum forward current at case temperature
Fig. 3 Power dissipation versus on-state current and ambient temperature (per thyristor or diode)
Fig. 4 Gate trigger characteristics
3 x STT130
Fig. 5 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature
Fig. 6 Gate trigger delay time
MTC130
Thyristor-Thyristor Modules
Fig. 7 Three phase AC-controller: Power dissipation versus RMS output current and ambient temperature
3 x STT130
Fig. 8 Transient thermal impedance junction to case (per thyristor or diode) RthJC for various conduction angles d: d DC 180oC 120oC 60oC 30oC RthJC (K/W) 0.230 0.244 0.255 0.283 0.321
Constants for ZthJC calculation: i 1 2 3 Rthi (K/W) 0.0095 0.0175 0.203 ti (s) 0.001 0.065 0.4
Fig. 9 Transient thermal impedance junction to heatsink (per thyristor or diode) RthJK for various conduction angles d: d DC 180oC 120oC 60oC 30oC RthJK (K/W) 0.330 0.344 0.355 0.383 0.421
Constants for ZthJK calculation: i 1 2 3 4 Rthi (K/W) 0.0095 0.0175 0.203 0.1 ti (s) 0.001 0.065 0.4 1.29

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